induced junction

См. также в других словарях:

• induced junction — indukuotoji sandūra statusas T sritis automatika atitikmenys: angl. induced junction vok. induzierter Übergang, m rus. наведённый переход, m pranc. jonction induite, f …   Automatikos terminų žodynas

• Electron beam induced current — (EBIC) is a semiconductor analysis technique performed in a scanning electron microscope (SEM) or scanning transmission electron microscope (STEM). It is used to identify buried junctions or defects in semiconductors, or to examine minority… …   Wikipedia

• Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP …   Wikipedia

• Neuromuscular junction — Electron micrograph showing a cross section through the neuromuscular junction. T is the axon terminal, M is the muscle fiber. The arrow shows junctional folds …   Wikipedia

• Gap junction protein, alpha 1 — Gap junction protein, alpha 1, 43kDa PDB rendering based on 1r5s …   Wikipedia

• p-n junction — Electric contact in transistors and related devices between two different types of material called p type and n type semiconductors. These materials are pure semiconductor materials, such as silicon, to which impurities have been added. Materials …   Universalium

• Temporoparietal junction — The temporoparietal junction (TPJ) is an area of the brain where the temporal and parietal lobes meet, at the posterior end of the Sylvian fissure. This area is known to play a crucial role in self other distinction processes and theory of mind… …   Wikipedia

• Optical beam induced current — (OBIC) is a semiconductor analysis technique performed using laser signal injection. The technique uses a scanning laser beam to create electron–hole pairs in a semiconductor sample. This induces a current which may be analyzed to determine the… …   Wikipedia

• Drain Induced Barrier Lowering — As channel length decreases, the barrier φB to be surmounted by an electron from the source on its way to the drain reduces Drain induced barrier lowering or DIBL is a secondary effect in MOSFETs referring originally to a reduction of threshold… …   Wikipedia

• Metal-induced gap states — In bulk semiconductor band structure calculations, it is assumed that the crystal lattice (which features a periodic potential due to the atomic structure) of the material is infinite. When the finite size of a crystal is taken into account, the… …   Wikipedia

• indukuotoji sandūra — statusas T sritis automatika atitikmenys: angl. induced junction vok. induzierter Übergang, m rus. наведённый переход, m pranc. jonction induite, f …   Automatikos terminų žodynas